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Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure

H. W. Jiang·E. Yablonovitch
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Abstract

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g-factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g-factors.

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H. W. Jiang, E. Yablonovitch. 2001-02-02. Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure. https://doi.org/10.1103/physrevb.64.041307

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