Searcharxiv⌕ Search

arXiv · cond-mat/0102394

Levitation of Current Carrying States in the Lattice Model for the Integer Quantum Hall Effect

Abstract

The disorder driven quantum Hall to insulator transition is investigated for a two-dimensional lattice model. The Hall conductivity and the localization length are calculated numerically near the transition. For uncorrelated and weakly correlated disorder potentials the current carrying states are annihilated by the negative Chern states originating from the band center. In the presence of correlated disorder potentials with correlation length larger than approximately half the lattice constant the floating up of the critical states in energy without merging is observed. This behavior is similar to the levitation scenario proposed for the continuum model.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Th. Koschny, H. Potempa, L. Schweitzer. 2001-04-24. Levitation of Current Carrying States in the Lattice Model for the Integer Quantum Hall Effect. https://doi.org/10.1103/physrevlett.86.3863

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Photoinduced topological phase transition in monolayer 1T$^\prime$-MoS$_2$

We investigate the systematic competition between perpendicular electric field and circularly polarized light in nonequilibrium topological phases of monolayer 1T$^\prime$--MoS$_2$ using a low-energy $k\!\cdot\!p$ Hamiltonian and Floquet theory. The off-resonant field generates spin- and valley-dependent mass corrections that reshape the Berry curvature (BC) and shift the conditions for band inversion. By evaluating the quasienergy bands, BC, and spin- valley-resolved Chern numbers, we identify a sequence of light and electric field controlled topological transitions by gap closing. Depending on the Floquet coupling strength and the electric-field parameter, the system evolves between the equilibrium quantum spin Hall (QSH) state and a set of driven phases including spin-polarized quantum Hall insulator (S-QHI), band insulator (BI) and photo-induced quantum Hall insulator (P-QHI) regimes. The results establish 1T$^\prime$--MoS$_2$ as a tunable platform where circular driving selectively manipulates spin and valley degrees of freedom, enabling controlled access to non-equilibrium topological phases in transition metal dichalcogenides (TMDs).

cond-mat.mes-hall↗

Engineering Fractional Topological Superconductors: Numerical Bogoliubov-de Gennes Analysis for Parafermion Realization in FCI-Superconductor Heterostructures

We propose a pathway to engineer Z3 parafermion zero modes in fractional Chern insulator-superconductor heterostructures. Using numerical Bogoliubov-de Gennes calculations and edge-theory analysis, we demonstrate how realistic materials such as MoTe2/NbSe2 can host parafermionic excitations with experimentally accessible signatures, including fractional Josephson effects, localized zero modes, interferometry, and thermal transport. Our work outlines concrete strategies for experimentally accessing parafermionic excitations in FCI-superconductor heterostructures.

cond-mat.mes-hall↗

Disentangling Spin Pumping and Two-Magnon Scattering Contributions to Gilbert Damping in YIG/V Bilayers

In this work, we investigate the magnetic damping and spin pumping response of YIG-based bilayers incorporating vanadium (V) as the normal metal layer via broadband ferromagnetic resonance (FMR) measurements as a function of YIG thickness. We show that the apparent enhancement of the Gilbert damping in YIG/V bilayers cannot be solely attributed to spin pumping. Instead, two-magnon scattering (TMS) plays a dominant role in governing the thickness dependence of the damping in the nanometer regime. By applying a thickness-dependent damping model that accounts for both spin pumping and two-magnon scattering contributions, we successfully disentangle the different relaxation contributions. Our analysis reveals that neglecting two-magnon scattering leads to an overestimation of the spin-pumping contribution and consequently to unphysically large values of the effective spin-mixing conductance. After isolating the intrinsic spin pumping contribution, we extract a thickness-independent effective spin-mixing conductance of $g^{\uparrow\downarrow}_{\mathrm{eff}} = 1.33 \times 10^{18}~\mathrm{m^{-2}}$. These findings provide a more accurate framework for quantifying spin transport parameters in FM/HM systems and emphasize the necessity of accounting for extrinsic damping mechanisms when interpreting spin pumping and inverse spin Hall effect experiments.

cond-mat.mes-hall↗