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Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's

Sergey A. Vitkalov
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Abstract

Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the main reason for the experimental observation. Comparison of two band model with experiment provides an upper limit for the electron-electron scattering time $τ_{ee}$ in the dilute 2D electron system as a function of electron density $n_s$. The time $τ_{ee}$ increases gradually with $n_s$, becoming much greater than the transport scattering time $τ_p$ for densities $n_s>4 \times 10 ^{11}$ cm$^{-2}$. Strong electron-electron scattering is found for $1.22 \times 10 ^{11} <n_s<3 \times 10 ^{11}$ cm$^{-2}$, the region which is near to the apparent metal insulator transition.

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Sergey A. Vitkalov. 2001-02-22. Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's. https://doi.org/10.1103/physrevb.64.195336

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