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Using electronic structure changes to map the H-T phase diagram of alpha'-NaV2O5

A. B. Sushkov·J. L. Musfeldt·S. A. Crooker·J. Jegoudez·A. Revcolevschi
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Abstract

We report polarized optical reflectance studies of α'-NaV2O5 as a function of temperature (4-45 K) and magnetic field (0-60 T). Rung directed electronic structure changes, as measured by near-infrared reflectance ratios ΔR(H)=R(H)/R(H=0 T), are especially sensitive to the phase boundaries. We employ these changes to map out an H-T phase diagram. Topological highlights include the observation of two phase boundaries slightly below T_{SG}, enhanced curvature of the 34 K phase boundary above 35 T, and, surprisingly, strong hysteresis effects of both transitions with applied field.

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A. B. Sushkov, J. L. Musfeldt, S. A. Crooker, J. Jegoudez, A. Revcolevschi. 2001-03-24. Using electronic structure changes to map the H-T phase diagram of alpha'-NaV2O5. https://doi.org/10.1103/physrevb.63.220401

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