Millisecond Electron-Phonon Relaxation in Ultrathin Disordered Metal Films at Millikelvin Temperatures

M. E. Gershenson; D. Gong; T. Sato; B. S. Karasik; A. V. Sergeev

doi:10.1063/1.1407302

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Millisecond Electron-Phonon Relaxation in Ultrathin Disordered Metal Films at Millikelvin Temperatures

M. E. Gershenson·D. Gong·T. Sato·B. S. Karasik·A. V. Sergeev

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Abstract

We have measured directly the thermal conductance between electrons and phonons in ultra-thin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron-phonon coupling in these films is significantly suppressed by disorder. The electron cooling time $τ_ε$ follows the $T^{-4}$-dependence with a record-long value $τ_ε=25ms$ at $T=0.04K$. The hot-electron detectors of far-infrared radiation, fabricated from such films, are expected to have a very high sensitivity. The noise equivalent power of a detector with the area $1\mum^2$ would be $(2-3)10^{-20}W/Hz^{1/2}$, which is two orders of magnitude smaller than that of the state-of-the-art bolometers.

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M. E. Gershenson, D. Gong, T. Sato, B. S. Karasik, A. V. Sergeev. 2001-04-04. Millisecond Electron-Phonon Relaxation in Ultrathin Disordered Metal Films at Millikelvin Temperatures. https://doi.org/10.1063/1.1407302

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