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Double quantum dots as a high sensitive submillimeter-wave detector

O. Astafiev·S. Komiyama·T. Kutsuwa
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Abstract

A single electron transistor (SET) consisting of parallel double quantum dots fabricated in a GaAs/Al$_{x}$Ga$_{1-x}$As heterostructure crystal is demonstrated to serve as an extremely high sensitive detector of submillimeter waves (SMMW). One of the double dots is ionized by SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum dot yielding the photoresponse. Noise equivalent power of the detector for wavelengths about 0.6 mm is estimated to reach the order of $10^{-17}$ W/$\sqrt{Hz}$ at 70 mK.

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O. Astafiev, S. Komiyama, T. Kutsuwa. 2001-04-06. Double quantum dots as a high sensitive submillimeter-wave detector. https://doi.org/10.1063/1.1396628

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