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The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

V. M. Pudalov·M. E. Gershenson·H. Kojima·N. Butch·E. M. Dizhur·G. Brunthaler·A. Prinz·G. Bauer
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Abstract

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility $χ^*$, the effective mass $m^*$, and the $g^*$-factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of $χ^*$ by a factor of $\sim 4.7$.

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V. M. Pudalov, M. E. Gershenson, H. Kojima, N. Butch, E. M. Dizhur, G. Brunthaler, A. Prinz, G. Bauer. 2001-10-09. The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers. https://doi.org/10.1103/physrevlett.88.196404

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