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Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

Yu. G. Arapov·O. A. Kuznetsov·V. N. Neverov·G. I. Harus·N. G. Shelushinina·M. V. Yakunin
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Abstract

Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.

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Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin. 2001-05-15. Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime. https://arxiv.org/abs/cond-mat/0105285

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