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Role of doped layers in dephasing of 2D electrons in quantum well structures

G. M. Minkov·A. V. Germanenko·O. E. Rut·A. A. Sherstobitov·B. N. Zvonkov·E. A. Uskova·A. A. Birukov
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Abstract

The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in quantum well and to saturation of the phase breaking time at low temperature.

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G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov, B. N. Zvonkov, E. A. Uskova, A. A. Birukov. 2001-06-04. Role of doped layers in dephasing of 2D electrons in quantum well structures. https://doi.org/10.1103/physrevb.64.193309

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