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Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

A. Chattopadhyay·S. Das Sarma·A. J. Millis
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Abstract

We formulate a theory of doped magnetic semiconductors such as Ga$_{1-x}$Mn$_x$As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature $T_c$ as a function of magnetic coupling strength $J$ and carrier density $n$. We find that $T_c$ is determined by a subtle interplay between carrier density and magnetic coupling.

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A. Chattopadhyay, S. Das Sarma, A. J. Millis. 2001-06-22. Transition temperature of ferromagnetic semiconductors: a dynamical mean field study. https://doi.org/10.1103/physrevlett.87.227202

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