arXiv · cond-mat/0107202
Critical Behaviour near the Mott Metal-Insulator Transition in a Two-band Hubbard Model
Abstract
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction $U$ at the $d$-orbital and the charge-transfer energy $Δ$ between the $d$- and $p$-orbitals. Critical behaviour of the quasiparticle weight is also obtained analytically as a function of $U$ and $Δ$. The analytic results are in good agreement with the numerical results of the exact diagonalization method.
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Y. Ohashi, Y. Ono. 2001-07-10. Critical Behaviour near the Mott Metal-Insulator Transition in a Two-band Hubbard Model. https://doi.org/10.1143/jpsj.70.2989
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