Discovery of microscopic electronic inhomogeneity in the high-Tc superconductor Bi2Sr2CaCu2O8+x

Abstract

The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess oxygen atoms, which introduce positive charge carriers (holes) into the CuO2 planes, where superconductivity is believed to originate. The role of these oxygen dopants is not well understood, other than the fact that they provide charge carriers. However, it is not even clear how these charges distribute in the CuO2 planes. Accordingly, many models of high-Tc superconductors simply assume that the charge carriers introduced by doping distribute uniformly, leading to an electronically homogeneous system, as in ordinary metals. Here we report the observation of an electronic inhomogeneity in the high-Tc superconductor Bi2Sr2CaCu2O8+x using scanning tunnelling microscopy/spectroscopy. This inhomogeneity is manifested as spatial variations in both the local density of states spectrum and the superconducting energy gap. These variations are correlated spatially and vary on a surprisingly short length scale of ~ 14 Angs. Analysis suggests that the inhomogeneity observed is a consequence of proximity to a Mott insulator resulting in poor screening of the charge potentials associated with the oxygen ions left behind in the BiO plane after doping. Hence this experiment is a direct probe of the local nature of the superconducting state, which is not easily accessible by macroscopic measurements.