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Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure

Chris Hillman·H. W. Jiang
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Abstract

Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under the microwave and radio- frequency double excitations, we have observed that the ESR line can be pinned in a very narrow range of magnetic field - in the vicinity of the nuclear magnetic resonance (NMR) of the nuclei of the GaAs crystal. Our observations suggest that this pinning effect is the result of a competition process between the ESR induced dynamic nuclear polarization and the NMR induced depolarization.

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Chris Hillman, H. W. Jiang. 2001-08-04. Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure. https://doi.org/10.1103/physrevb.64.201308

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