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Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

G. Schmidt·G. Richter·P. Grabs·C. Gould·D. Ferrand·L. W. Molenkamp
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Abstract

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.

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G. Schmidt, G. Richter, P. Grabs, C. Gould, D. Ferrand, L. W. Molenkamp. 2001-08-30. Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor. https://doi.org/10.1103/physrevlett.87.227203

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