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Adiabatic stabilization of excitons in intense terahertz laser

Ren-Bao Liu·Bang-Fen Zhu
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Abstract

High-precise calculation of near-infrared absorption and transient spectra in bulk semiconductors irradiated by an intense terahertz (THz) laser shows that, the ionization rate of the ground-state exciton, probed through the dynamic Fano resonance, may decrease with the increase of the THz laser intensity. This counterintuitive effect indicates the excitons are stabilized against the field-ionization. The much lower Rydberg energy and ``atomic unit'' of laser intensity for excitons, and the possibility of creating excitons from the ``vacuum state'' allow observing the excitonic stabilization in experiments, in contrast to the case of atomic stabilization.

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Ren-Bao Liu, Bang-Fen Zhu. 2001-09-04. Adiabatic stabilization of excitons in intense terahertz laser. https://doi.org/10.1103/physrevb.66.033106

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