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Micromechanical electrometry of single-electron transistor island charge

M. P. Blencowe·Y. Zhang
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Abstract

We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.

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M. P. Blencowe, Y. Zhang. 2001-09-12. Micromechanical electrometry of single-electron transistor island charge. https://doi.org/10.1016/s0921-4526(02)00529-x

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