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Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime

Y. Y. Proskuryakov·A. K. Savchenko·S. S. Safonov·M. Pepper·M. Y. Simmons·D. A. Ritchie
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Abstract

On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTτ/\hbar $ $>1$. It is shown that the 'metallic' behaviour of the resistivity ($dρ/dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant $F_0^σ$ which controls the sign of $dρ/dT$.

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Y. Y. Proskuryakov, A. K. Savchenko, S. S. Safonov, M. Pepper, M. Y. Simmons, D. A. Ritchie. 2001-09-14. Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime. https://doi.org/10.1103/physrevlett.89.076406

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