Absence of magic fillings of carrier-doped C$_{60}$ in a field-effect transistor

Seiji Yunoki; George A. Sawatzky

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Absence of magic fillings of carrier-doped C$_{60}$ in a field-effect transistor

Seiji Yunoki·George A. Sawatzky

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Abstract

Motivated by recent experiments of carrier-doped C$_{60}$ in a field-effect transistor (FET), effects of spatial single particle potential variations on Mott-Hubbard (MH) insulators are studied theoretically. It is shown that the presence of strong random potentials leads to a reduced dependence of electronic properties on band fillings and to disappearance of the MH insulating behavior at integer fillings. A simple physical picture to explain this behavior is given using a notion of self-doping of the MH insulator. Our results have important implications on some of the puzzling observations of carrier-doped C$_{60}$ in the FET. It is also discussed that the FET configuration with Al{$_2$}O{$_3$} dielectric provides an ``ideal'' system with strong disorders.

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Seiji Yunoki, George A. Sawatzky. 2001-10-29. Absence of magic fillings of carrier-doped C$_{60}$ in a field-effect transistor. https://arxiv.org/abs/cond-mat/0110602

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