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Probing confined interfacial excitations in buried layers by Brillouin light scattering

Xinya Zhang·R Sooryakumar
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Abstract

Brillouin light scattering from silicon oxynitride films grown on GaAs reveals a low frequency elastic wave excitation at frequencies lying below that of the Rayleigh surface wave. This mode, identified as an excitation localized by the interface, arises from the presence of a soft, thin transition layer between the film and substrate. Observations of this low frequency excitation offer a previously unexplored approach to characterize, non-destructively, the properties of buried interfaces.

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Xinya Zhang, R Sooryakumar. 2001-11-03. Probing confined interfacial excitations in buried layers by Brillouin light scattering. https://doi.org/10.1063/1.1484550

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