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Ultrafast Spin Dynamics in GaAs/GaSb/InAs Heterostructures Probed by Second Harmonic Generation

Yu. D. Glinka·T. V. Shahbazyan·I. E. Perakis·N. H. Tolk·X. Liu·Y. Sasaki·J. K. Furdyna
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Abstract

We report the first application of pump-probe second harmonic generation (SHG) measurements to characterize optically-induced magnetization in non-magnetic multilayer semiconductors. In the experiment, coherent spins are selectively excited by a pump beam in the GaAs layer of GaAs/GaSb/InAs structures. However, the resulting net magnetization manifests itself through the induced SHG probe signal from the GaSb/InAs interface, thus indicating a coherent spin transport across the heterostructure. We find that the magnetization dynamics is governed by an interplay between the spin density evolution at the interfaces and the spin dephasing.

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Yu. D. Glinka, T. V. Shahbazyan, I. E. Perakis, N. H. Tolk, X. Liu, Y. Sasaki, J. K. Furdyna. 2001-11-14. Ultrafast Spin Dynamics in GaAs/GaSb/InAs Heterostructures Probed by Second Harmonic Generation. https://doi.org/10.1063/1.1494107

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