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Sharp increase of the effective mass near the critical density in a metallic 2D electron system

A. A. Shashkin·S. V. Kravchenko·V. T. Dolgopolov·T. M. Klapwijk
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Abstract

We find that at intermediate temperatures, the metallic temperature dependence of the conductivity σ(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope dσ/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Unexpectedly, it is found to originate from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon.

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A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov, T. M. Klapwijk. 2001-12-01. Sharp increase of the effective mass near the critical density in a metallic 2D electron system. https://doi.org/10.1103/physrevb.66.073303

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