Reply to cond-mat/0111504

Mona Berciu; R. N. Bhatt

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Reply to cond-mat/0111504

Mona Berciu·R. N. Bhatt

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Abstract

We show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).

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Mona Berciu, R. N. Bhatt. 2001-12-10. Reply to cond-mat/0111504. https://arxiv.org/abs/cond-mat/0112165

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