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Calculations on the Size Effects of Raman Intensities of Silicon Quantum Dots

Wei Cheng·Shang-Fen Ren
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Abstract

Raman intensities of Si quantum dots (QDs) with up to 11,489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QDs, including all vibration frequencies and vibration amplitudes, are calculated directly from the lattice dynamic matrix by using a microscopic valence force field model combined with the group theory. Then the Raman intensities of these quantum dots are calculated by using a bond-polarizability approximation. The size effects of the Raman intensity in these QDs are discussed in detail based on these calculations. The calculations are compared with the available experimental observation. We are expecting that our calculations can further stimulate more experimental measurements.

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Wei Cheng, Shang-Fen Ren. 2001-12-10. Calculations on the Size Effects of Raman Intensities of Silicon Quantum Dots. https://doi.org/10.1103/physrevb.65.205305

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