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Spin-polarized tunneling through a thin-film

Alireza Saffarzadeh
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Abstract

The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated with the use of the $s-f$ model. Electron-spin polarization is evaluated in the tunnel current which comes from the different densities of spin-up, spin-down conduction electrons at the Fermi level in a ferromagnetic semiconductor (EuS). Calculated results are compared with some tunneling experiments.

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Alireza Saffarzadeh. 2001-12-22. Spin-polarized tunneling through a thin-film. https://doi.org/10.1016/s0375-9601(00)00340-6

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