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Spin-polarized tunneling in ferromagnetic double barrier junctions

Alireza Saffarzadeh
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Abstract

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers.

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Alireza Saffarzadeh. 2001-12-26. Spin-polarized tunneling in ferromagnetic double barrier junctions. https://doi.org/10.1007/s100510170002

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