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The Role of Non-Equilibrium Carriers in Formation of Thermo-E.M.F. in Bipolar Semiconductors

Yu. G. Gurevich·G. N. Logvinov·I. N. Volovichev·G. Espejo·O. Yu. Titov·A. Meriuts
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Abstract

A new approach to thermoelectric phenomena, as a linear transport process of non-equilibrium charge carriers, is presented. The role of non-equilibrium carriers, as well as surface and bulk recombination, is demonstrated to be crucial even within a linear approximation. Electron and hole Fermi quasi-levels appeared in a thermal field are calculated in the case of thermoelectric current flow through a circuit. It is shown, for the first time, that the Fermi quasi-level of one of subsystem of quasi-particles can be a non-monotonic function of the coordinates. General expressions for the thermoelectric current, thermo-e.m.f., and electrical resistance of bipolar semiconductors have been obtained. For the first time the surface recombination and surface resistance were taken into account.

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Yu. G. Gurevich, G. N. Logvinov, I. N. Volovichev, G. Espejo, O. Yu. Titov, A. Meriuts. 2002-02-06. The Role of Non-Equilibrium Carriers in Formation of Thermo-E.M.F. in Bipolar Semiconductors. https://doi.org/10.1002/1521-3951(200205)231%3A1%3C278%3A%3Aaid-pssb278%3E3.0.co%3B2-5

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