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p-Type semiconducting properties in lithium-doped MgO single crystals

M. M. Tardio·R. Ramirez·R. Gonzalez·Y. Chen
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Abstract

The phenomenally large enhancement in conductivity observed when Li-doped MgO crystals are oxidized at elevated temperatures was investigated by dc and ac electrical measurements in the temperature interval 250-673 K. The concentration of ([Li]^{0}) centers (Li^{+} ions each with a trapped hole) resulting from oxidation was monitored by optical absorption measurements. Both dc and ac experiments provide consistent values for the bulk resistance. The electricalconductivity of oxidized MgO:Li crystals increases linearly with the concentration of ([Li]^{0}) centers. The conductivity is thermally activated with an activation energy of (0.70 +/- 0.01) eV, which is independent of the ([Li]^{0}) content. The \textit{standard semiconducting} mechanism satisfactorily explains these results. Free holes are the main contribution to band conduction as they are trapped at or released from the ([Li]^{0})-acceptor centers. In as-grown MgO:Li crystals, electrical current increases dramatically with time due to the formation of ([Li]^{0}) centers. The activation energy values between 1.3 and 0.7 eV are likely a combination of the activation energy for the creation of ([Li]^{0}) centers and the activation energy of ionization of these centers. Destruction of ([Li]^{0}) centers can be induced in oxidized crystals by application of an electric field due to Joule heating up to temperatures at which ([Li]^{0}) centers are not stable.

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M. M. Tardio, R. Ramirez, R. Gonzalez, Y. Chen. 2002-01-28. p-Type semiconducting properties in lithium-doped MgO single crystals. https://doi.org/10.1103/physrevb.66.134202

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