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Spin-polarized light emitting diode using metal/insulator/semiconductor structures

T. Manago·H. Akinaga
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Abstract

We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.

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T. Manago, H. Akinaga. 2002-02-22. Spin-polarized light emitting diode using metal/insulator/semiconductor structures. https://doi.org/10.1063/1.1496493

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