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Scaling of nano-Schottky-diodes

G. D. J. Smit·S. Rogge·T. M. Klapwijk
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Abstract

A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.

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G. D. J. Smit, S. Rogge, T. M. Klapwijk. 2002-09-25. Scaling of nano-Schottky-diodes. https://doi.org/10.1063/1.1521251

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