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Strong enhancement of the valley splitting in a 2D electron system in silicon

V. S. Khrapai·A. A. Shashkin·V. T. Dolgopolov
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Abstract

Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at ν=1 and ν=3. The data yield a valley gap that is strongly enhanced compared to the single-particle value and increases LINEARLY with magnetic field. This result has not been explained by existing theories.

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V. S. Khrapai, A. A. Shashkin, V. T. Dolgopolov. 2002-12-23. Strong enhancement of the valley splitting in a 2D electron system in silicon. https://doi.org/10.1103/physrevb.67.113305

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