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Stress relief as the driving force for self-assembled Bi nanolines

J. H. G. Owen·K. Miki·H. Koh·H. W. Yeom·D. R. Bowler
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Abstract

Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their straightness and length -- they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we have found an energetically favourable structure for these nanolines that agrees with our scanning tunneling microscopy and photoemission experiments; the structure has an extremely unusual subsurface structure, comprising a double core of 7-membered rings of silicon. Our proposed structure explains all the observed features of the nanolines, and shows that surface stress resulting from the mismatch between the Bi and the Si substrate are responsible for their self-assembly. This has wider implications for the controlled growth of nanostructures on semiconductor surfaces.

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J. H. G. Owen, K. Miki, H. Koh, H. W. Yeom, D. R. Bowler. 2002-02-28. Stress relief as the driving force for self-assembled Bi nanolines. https://doi.org/10.1103/physrevlett.88.226104

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