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Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As

J. Okabayashi·T. Mizokawa·D. D. Sarma·A. Fujimori·T. Slupinski·A. Oiwa·H. Munekata
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Abstract

We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.

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J. Okabayashi, T. Mizokawa, D. D. Sarma, A. Fujimori, T. Slupinski, A. Oiwa, H. Munekata. 2002-03-04. Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As. https://doi.org/10.1103/physrevb.65.161203

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