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Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

E. H. Hwang·S. Das Sarma
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Abstract

We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments.

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E. H. Hwang, S. Das Sarma. 2002-03-13. Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system. https://doi.org/10.1103/physrevb.67.115316

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