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Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions

Phivos Mavropoulos·Olaf Wunnicke·Peter H. Dederichs
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Abstract

We present {\it ab initio} calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-Büttiker approach for the calculation of the spin-dependent dc conductance in the linear-responce regime, in the limit of zero temperature. We show that the bulk band structure of the leads and of the semiconductor, and even more the electronic structure of a clean and abrupt interface, are responsible for a current polarisation and a magnetoresistance ratio of almost the ideal 100%, if the transport is ballistic. In particular we study the significance of the transmission resonances caused by the presence of two interfaces.

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Phivos Mavropoulos, Olaf Wunnicke, Peter H. Dederichs. 2002-03-26. Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions. https://doi.org/10.1103/physrevb.66.024416

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