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Raman properties of GaSb nanoparticles embedded in SiO2 films

Fa-Min Liu·Tian-Min Wang·Jian-Qi Li·Li-De Zhang·Guo-Hua Li
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Abstract

The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser of wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experiment and explained by phonon confinement, tensile stress, resonance Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. Calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.

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Fa-Min Liu, Tian-Min Wang, Jian-Qi Li, Li-De Zhang, Guo-Hua Li. 2002-04-01. Raman properties of GaSb nanoparticles embedded in SiO2 films. https://arxiv.org/abs/cond-mat/0204031

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