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Ultrafast Dynamics of Interfacial Electric Fields in Semiconductor Heterostructures Monitored by Pump-Probe Second Harmonic Generation

Yu. D. Glinka·T. V. Shahbazyan·I. E. Perakis·N. H. Tolk·X. Liu·Y. Sasaki·J. K. Furdyna
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Abstract

We report first measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second harmonic generation (SHG). A pump beam was tuned to excite carriers in all layers of GaAs/GaSb and GaAs/GaSb/InAs heterostructures. Further carrier dynamics manifests itself via electric fields created by by charge separation at interfaces. The evolution of interfacial fields is monitored by a probe beam through the eletric-field-induced SHG signal. We distinguish between several stages of dynamics originating from redistribution of carriers between the layers. We also find a strong enhancement of the induced electric field caused by hybridization of the conduction and valence bands at the GaSb/InAs interface.

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Yu. D. Glinka, T. V. Shahbazyan, I. E. Perakis, N. H. Tolk, X. Liu, Y. Sasaki, J. K. Furdyna. 2002-04-04. Ultrafast Dynamics of Interfacial Electric Fields in Semiconductor Heterostructures Monitored by Pump-Probe Second Harmonic Generation. https://doi.org/10.1063/1.1521573

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