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Coulomb Blockade Oscillations of Conductance at Finite Energy Level Spacing in a Quantum Dot

Serguei Vorojtsov
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Abstract

We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels in a grain in the sequential tunneling approximation. In the case of spinless electrons our theory describes transport through a dot in the quantum Hall regime. In the case of spin-1/2 electrons we analyze the line shape of a peak, shift in the position of the peak's maximum as a function of temperature, and the values of the conductance in the odd and even valleys.

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Serguei Vorojtsov. 2004-10-20. Coulomb Blockade Oscillations of Conductance at Finite Energy Level Spacing in a Quantum Dot. https://doi.org/10.1142/s0217979204026706

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