Strain induced stabilization of stepped Si and Ge surfaces near (001)

V. B. Shenoy; C. V. Ciobanu; L. B. Freund

doi:10.1063/1.1491611

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Strain induced stabilization of stepped Si and Ge surfaces near (001)

V. B. Shenoy·C. V. Ciobanu·L. B. Freund

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Abstract

We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of ``hut''-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain.

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V. B. Shenoy, C. V. Ciobanu, L. B. Freund. 2002-05-10. Strain induced stabilization of stepped Si and Ge surfaces near (001). https://doi.org/10.1063/1.1491611

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