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Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

V. M. Pudalov·M. E. Gershenson·H. Kojima·G. Brunthaler·A. Prinz·G. Bauer
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Abstract

We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance ρ(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than ρ(T).

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V. M. Pudalov, M. E. Gershenson, H. Kojima, G. Brunthaler, A. Prinz, G. Bauer. 2002-05-30. Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures. https://doi.org/10.1103/physrevlett.91.126403

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