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Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2

C. Petrovic·J. W. Kim·S. L. Bud'ko·A. I. Goldman·P. C. Canfield·W. Choe·G. J. Miller
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Abstract

A study of the anisotropy in magnetic, transport and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100K. Electrical transport along two axes is semiconducting whereas the third axis exhibits a metal - semiconductor crossover at temperature Tmin which is sensitive to current alignment and ranges between 40 and 80K. In H=70kOe semiconducting transport is restored for T<300K, resulting in large magnetoresistance [rho(70kOe)-rho(0)]/rho(0)=2200% in the crossover temperature range

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C. Petrovic, J. W. Kim, S. L. Bud'ko, A. I. Goldman, P. C. Canfield, W. Choe, G. J. Miller. 2002-06-11. Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2. https://doi.org/10.1103/physrevb.67.155205

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