arXiv · cond-mat/0206503
Electric Field Induced Kondo Tunneling Through Double Quantum Dot
Abstract
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD.
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M. N. Kiselev, K. Kikoin, L. W. Molenkamp. 2002-07-18. Electric Field Induced Kondo Tunneling Through Double Quantum Dot. https://arxiv.org/abs/cond-mat/0206503
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