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p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells

W. Maslana·M. Bertolini·H. Boukari·P. Kossacki·D. Ferrand·J. A. Gaj·S. Tatarenko·J. Cibert
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Abstract

We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.

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W. Maslana, M. Bertolini, H. Boukari, P. Kossacki, D. Ferrand, J. A. Gaj, S. Tatarenko, J. Cibert. 2003-02-04. p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells. https://doi.org/10.1063/1.1560873

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