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Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals

K. Racka·I. Kuryliszyn·M. Arciszewska·W. Dobrowolski·J. -M. Broto·M. Goiran·O. Portugall·H. Rakoto·B. Raquet·V. Dugaev·E. I. Slynko·V. E. Slynko
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Abstract

The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.

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K. Racka, I. Kuryliszyn, M. Arciszewska, W. Dobrowolski, J. -M. Broto, M. Goiran, O. Portugall, H. Rakoto, B. Raquet, V. Dugaev, E. I. Slynko, V. E. Slynko. 2002-07-15. Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals. https://arxiv.org/abs/cond-mat/0207355

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