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Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles

Olaf Wunnicke·Phivos Mavropoulos·Peter H. Dederichs
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Abstract

We calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility of a Schottky barrier. From our results of interface resistance we estimate the barrier thickness needed for efficient spin injection if the process is non-ballistic.

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Olaf Wunnicke, Phivos Mavropoulos, Peter H. Dederichs. 2002-07-19. Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles. https://arxiv.org/abs/cond-mat/0207492

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