Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts

Hai Wang; H. Cheng; N. Garcia

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Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts

Hai Wang·H. Cheng·N. Garcia

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Abstract

This paper reports ballistic magnetoresistance values over 4000% measured in electrodeposited Ni-Ni nanocontacts with T geometry previously developed . Over the time, after several magnetic field cycles, the ballistic magnetoresistance relaxed to a 400%. While that the magnetoreistance of a contact could rise indefinitely; relaxtion and reproducibility are, however, the main issue. We find that the tip ending radius conforming the contacts appears not to play the main role.

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Hai Wang, H. Cheng, N. Garcia. 2002-07-22. Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts. https://arxiv.org/abs/cond-mat/0207516

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