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Magnetic-field dependence of electron spin relaxation in n-type semiconductors

Franz X. Bronold·Ivar Martin·Avadh Saxena·Darryl L. Smith
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Abstract

We present a theoretical investigation of the magnetic field dependence of the longitudinal ($T_1$) and transverse ($T_2$) spin relaxation times of conduction band electrons in n-type III-V semiconductors. In particular, we find that the interplay between the Dyakonov-Perel process and an additional spin relaxation channel, which originates from the electron wave vector dependence of the electron $g$-factor, yields a maximal $T_2$ at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic field dependence of electron spin lifetimes.

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Franz X. Bronold, Ivar Martin, Avadh Saxena, Darryl L. Smith. 2002-12-06. Magnetic-field dependence of electron spin relaxation in n-type semiconductors. https://doi.org/10.1103/physrevb.66.233206

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