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Fabrication and properties of gallium metallic photonic crystals

V. F. Kozhevnikov·M. Diwekar·V. P. Kamaev·J. Shi·Z. V. Vardeny
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Abstract

Gallium metallic photonic crystals with 100% filling factor have been fabricated via infiltration of liquid gallium into opals of 300-nm silica spheres using a novel high pressure-high temperature technique. The electrical resistance of the Ga-opal crystals was measured at temperatures from 10 to 280 K. The data obtained show that Ga-opal crystals are metallic network with slightly smaller temperature coefficient of resistivity than that for bulk gallium. Optical reflectivity of bulk gallium, plain opal and several Ga-opal crystals were measured at photon energies from 0.3 to 6 eV. A pronounced photonic stop band in the visible spectral range was found in both the plain and Ga infiltrated opals. The reflectivity spectra also show increase in reflectivity below 0.6 eV; which we interpret as a significantly lower effective plasma frequency of the metallic mesh in the infiltrated opal compare to the plasma frequency in the pure metal.

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V. F. Kozhevnikov, M. Diwekar, V. P. Kamaev, J. Shi, Z. V. Vardeny. 2002-08-20. Fabrication and properties of gallium metallic photonic crystals. https://doi.org/10.1016/s0921-4526(03)00479-4

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