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Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

K W Edmonds·R P Campion·K-Y Wang·A C Neumann·B L Gallagher·C T Foxon·P C Main
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Abstract

The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors.

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K W Edmonds, R P Campion, K-Y Wang, A C Neumann, B L Gallagher, C T Foxon, P C Main. 2002-09-05. Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs. https://doi.org/10.1063/1.1556110

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