Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · cond-mat/0209156

Raman phonons as a probe of disorder, fluctuations and local structure in doped and undoped orthorhombic and rhombohedral manganites

L. Martin-Carron·A. de Andres·M. J. Martinez-Lope·M. T. Casais·J. A. Alonso
View original source ↗Read source document ↗Export metadata ↓

Abstract

We present a rationalization of the Raman spectra of orthorhombic and rhombohedral, stoichiometric and doped, manganese perovskites. In particular we study RMnO3 (R= La, Pr, Nd, Tb, Ho, Er, Y and Ca) and the different phases of Ca or Sr doped RMnO3 compounds as well as cation deficient RMnO3. The spectra of manganites can be understood as combinations of two kinds of spectra corresponding to two structural configurations of MnO6 octahedra and independently of the average structure obtained by diffraction techniques. The main peaks of compounds with regular MnO6 octahedra, as CaMnO3, highly Ca doped LaMnO3 or the metallic phases of Ca or Sr doped LaMnO3, are bending and tilt MnO6 octahedra modes which correlate to R-O(1) bonds and Mn-O-Mn angles respectively. In low and optimally doped manganites, the intensity and width of the broad bands are related to the amplitude of the dynamic fluctuations produced by polaron hopping in the paramagnetic insulating regime. The activation energy, which is proportional to the polaron binding energy, is the measure of this amplitude. This study permits to detect and confirm the coexistence, in several compounds, of a paramagnetic matrix with lattice polaron together with regions without dynamic or static octahedron distortions, identical to the ferromagnetic metallic phase. We show that Raman spectroscopy is an excellent tool to obtain information on the local structure of the different micro or macro-phases present simultaneously in many manganites.

Explore related subjects

cond-mat.mtrl-scicond-mat.str-el

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

L. Martin-Carron, A. de Andres, M. J. Martinez-Lope, M. T. Casais, J. A. Alonso. 2002-09-06. Raman phonons as a probe of disorder, fluctuations and local structure in doped and undoped orthorhombic and rhombohedral manganites. https://doi.org/10.1103/physrevb.66.174303

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗