Shot Noise in Tunneling through a Quantum Dot Array

G. Kiesslich; A. Wacker; E. Schoell; A. Nauen; F. Hohls; R. J. Haug

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Shot Noise in Tunneling through a Quantum Dot Array

G. Kiesslich·A. Wacker·E. Schoell·A. Nauen·F. Hohls·R. J. Haug

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Abstract

The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.

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G. Kiesslich, A. Wacker, E. Schoell, A. Nauen, F. Hohls, R. J. Haug. 2002-09-23. Shot Noise in Tunneling through a Quantum Dot Array. https://arxiv.org/abs/cond-mat/0209523

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